PESD3V3X1BL,315【PDF 10/11 页】DIODE ESD PROT ULOW BIDIR SOD882

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NXP Semiconductors

PESD3V3X1BL

Ultra low capacitance bidirectional ESD protection diode

13. Legal information

13.1 Data sheet status

Document status [1][2]

Objective [short] data sheet

Preliminary [short] data sheet

Product [short] data sheet

Product status [3]

Development

Quali?cation

Production

De?nition

This document contains data from the objective speci?cation for product development.

This document contains data from the preliminary speci?cation.

This document contains the product speci?cation.

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “De?nitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com .

13.2 De?nitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modi?cations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

of?ce. In case of any inconsistency or con?ict with the short data sheet, the

full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speci?cations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speci?ed use without further testing or modi?cation.

Limiting values — Stress above one or more limiting values (as de?ned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/pro?le/terms , including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or con?ict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

ESD protection devices — These products are only intended for protection

against ElectroStatic Discharge (ESD) pulses and are not intended for any

other usage including, without limitation, voltage regulation applications. NXP

Semiconductors accepts no liability for use in such applications and therefore

such use is at the customer’s own risk.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales of?ce addresses, please send an email to: salesaddresses@nxp.com

PESD3V3X1BL_1

? NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 6 January 2009

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相关代理商/技术参数

PESD3V3X1BL315 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:

PESD5V0C1BSFYL 功能描述:TVS DIODE 5VWM 6.5VC DSN0603-2 制造商:nexperia usa inc. 系列:TrEOS 包装:剪切带（CT）零件状态:在售类型:齐纳双向通道:1 电压 - 反向关态（典型值）:5V（最大）电压 - 击穿（最小值）:6V 电压 - 箝位（最大值）@ Ipp:6.5V（标准）电流 - 峰值脉冲（10/1000μs）:9A（8/20μs）功率 - 峰值脉冲:- 电源线路保护:无应用:通用不同频率时的电容:0.2pF @ 1MHz 工作温度:-40°C ~ 125°C（TA）安装类型:表面贴装封装/外壳:0201（0603 公制）供应商器件封装:DSN0603-2 标准包装:1

PESD5V0C1USF 功能描述:TVS DIODE 5VWM 3VC DSN0603-2 制造商:nexperia usa inc. 系列:TrEOS 包装:剪切带（CT）零件状态:在售类型:齐纳单向通道:1 电压 - 反向关态（典型值）:5V（最大）电压 - 击穿（最小值）:5.5V 电压 - 箝位（最大值）@ Ipp:3V 电流 - 峰值脉冲（10/1000μs）:9A（8/20μs）功率 - 峰值脉冲:- 电源线路保护:无应用:通用不同频率时的电容:0.45pF @ 1MHz 工作温度:-40°C ~ 125°C（TA）安装类型:表面贴装封装/外壳:0201（0603 公制）供应商器件封装:DSN0603-2 标准包装:1

PESD5V0C1USFYL 功能描述:TVS DIODE 5VWM 3VC DSN0603-2 制造商:nexperia usa inc. 系列:TrEOS 包装:带卷（TR）零件状态:在售类型:齐纳单向通道:1 电压 - 反向关态（典型值）:5V（最大）电压 - 击穿（最小值）:5.5V 电压 - 箝位（最大值）@ Ipp:3V 电流 - 峰值脉冲（10/1000μs）:9A（8/20μs）功率 - 峰值脉冲:- 电源线路保护:无应用:通用不同频率时的电容:0.45pF @ 1MHz 工作温度:-40°C ~ 125°C（TA）安装类型:表面贴装封装/外壳:0201（0603 公制）供应商器件封装:DSN0603-2 标准包装:9,000

PESD5V0F1BL 制造商:NXP Semiconductors 功能描述:DIODE ESD 5.5V BIDIR SOD882 制造商:NXP Semiconductors 功能描述:DIODE, ESD, 5.5V, BIDIR, SOD882 制造商:NXP Semiconductors 功能描述:DIODE, ESD, 5.5V, BIDIR, SOD882; TVS Polarity:Bidirectional; Reverse Stand-Off Voltage Vrwm:5.5V; Clamping Voltage Vc Max:15V; Peak Pulse Current Ippm:2.5A; Diode Case Style:SOD-882D; No. of Pins:2 ;RoHS Compliant: Yes

PESD5V0F1BL,315 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE FEMTOFARAD BI ESD RoHS:否制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C

PESD5V0F1BLD 制造商:NXP Semiconductors 功能描述:DIODE ESD 5V UNIDIR 400FF 制造商:NXP Semiconductors 功能描述:DIODE, ESD, 5V, UNIDIR, 400FF, SOD882; Diode Type:ESD Protection; Clamping Voltage Vc Max:15V; Operating Voltage:5.5V; Diode Case Style:SOD-882D; No. of Pins:2; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Device Marking:H; ;RoHS Compliant: Yes

PESD5V0F1BLD,315 制造商:NXP Semiconductors 功能描述:ESD Suppressor TVS 10KV 2-Pin SOD-882 T/R 制造商:NXP Semiconductors 功能描述:PESD5V0F1BLD/SOD2/REELP2// - Tape and Reel 制造商:NXP Semiconductors 功能描述:IC ESD DIODE PROTECTION SOD2